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FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Rds On (Max) @ Id, Vgs | 3.7 mOhm @ 20A, 10V |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 21A |
Vgs(th) (Max) @ Id | 2.35V @ 100µA |
Gate Charge (Qg) @ Vgs | 45nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 4090pF @ 15V |
Power - Max | 2.5W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
Корпус | 8-SO |
IRF7862PBF (MOSFET) HEXFET Power MOSFETs Discrete N-Channel
Производитель:
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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EC5575F (AS15-F) |
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1 609.20 | ||||||
EC5575F (AS15-F) |
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1 609.20 | ||||||
EC5575F (AS15-F) | E-CMOS |
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FBT FCV-1422L01 |
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FBT FCV-1422L01 | JAVA | 1 | 170.47 | |||||
FBT FCV-1422L01 |
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FSFR1700 | FSC |
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FSFR1700 |
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1 560.00 | ||||||
FSFR1700 | FAIR |
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FSFR1700 | FAIRCHILD |
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FSFR1700 | FAIRCHILD |
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FSFR1700 | Fairchild Semiconductor |
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FSFR1700 | FSC1 |
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FSFR1700 | ONS |
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GT30J322 | TOSHIBA |
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GT30J322 | TOS |
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GT30J322 |
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841.04 | ||||||
GT60N321[Q] | TOSHIBA |
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GT60N321[Q] | TOS |
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GT60N321[Q] |
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1 057.20 |
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Корзина
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