|
Gate Charge (Qg) @ Vgs | 3.9nC @ 4.5V |
Vgs(th) (Max) @ Id | 2.5V @ 25µA |
Current - Continuous Drain (Id) @ 25° C | 3.6A |
Drain to Source Voltage (Vdss) | 40V |
Rds On (Max) @ Id, Vgs | 56 mOhm @ 3.6A, 10V |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) @ Vds | 266pF @ 25V |
Power - Max | 1.3W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
Корпус | Micro3™/SOT-23 |
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
---|---|---|---|---|---|---|---|---|
CRCW060310K0FKEA | VISHAY | |||||||
CRCW060310K0FKEA | VISHAY | 2 193 | ||||||
CRCW060310K0FKEA | Vishay/Dale | |||||||
CRCW060310K0FKEA | ||||||||
CRCW060310K0FKEA | VIS | |||||||
ETC4-1-2TR | 102.00 | |||||||
ETC4-1-2TR | 102.00 | |||||||
ETC4-1-2TR | M/A | |||||||
ETC4-1-2TR | MACOM | |||||||
LIS3DHTR | 7 682 | 43.30 | ||||||
LIS3DHTR | STMicroelectronics | |||||||
LIS3DHTR | ST MICROELECTRONICS SEMI | |||||||
LIS3DHTR | ST MICROELECTRONICS | 35 940 | 56.22 | |||||
LIS3DHTR | STMICROELECTR | |||||||
PIC12F1822-I/SN | MICRO CHIP | 536 | 255.84 | |||||
PIC12F1822-I/SN | Microchip Technology | |||||||
PIC12F1822-I/SN | MICRO CHIP | 2 532 | ||||||
PIC12F1822-I/SN | ТАИЛАНД | |||||||
PIC12F1822-I/SN | ||||||||
RC0603JR-07120KL | YAGEO | 246 068 |
0.90 >1000 шт. 0.18 |
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RC0603JR-07120KL | YAGEO | |||||||
RC0603JR-07120KL |
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