MOSFET N-CH 20V 100A DPAK |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Серия | HEXFET® |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 4 mOhm @ 21A, 4.5V |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 100A |
Vgs(th) (Max) @ Id | 1.1V @ 50µA |
Gate Charge (Qg) @ Vgs | 72nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 3770pF @ 10V |
Power - Max | 63W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Корпус | TO-252AA |
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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19TQ015STRR | INTERNATIONAL RECTIFIER | |||||||
19TQ015STRR | INTERNATIONAL RECTIFIER | |||||||
19TQ015STRR | Vishay/Semiconductors | |||||||
LT1763CS8-5#PBF | Linear Technology | |||||||
T93YA104KT20 | VISHAY | |||||||
T93YA104KT20 | Vishay/Sfernice | |||||||
T93YA104KT20 | ЧЕХИЯ | |||||||
T93YA104KT20 | ЧЕШСКАЯ РЕСПУБЛ | |||||||
T93YA104KT20 | ||||||||
ПМ-1-63В-1000 ПФ-10% | 7 820 | 3.52 | ||||||
С2-100.125ВТ909ОМ(1%) |
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