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FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Rds On (Max) @ Id, Vgs | 1.4 mOhm @ 200A, 10V |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25° C | 240A |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) @ Vgs | 180nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 10990pF @ 40V |
Power - Max | 380W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-263-7, D²Pak (6 leads + Tab), TO-263CB |
Корпус | D2PAK (7-Lead) |
IRLS3034-7PPbF (MOSFET) 40V Single N-Channel HEXFET Power MOSFET
Производитель:
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