BSP125
|
Версия для печати
| Rds On (Max) @ Id, Vgs | 45 Ohm @ 120mA, 10V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | SIPMOS® |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 120mA |
| Vgs(th) (Max) @ Id | 2.3V @ 94µA |
| Gate Charge (Qg) @ Vgs | 6.6nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 150pF @ 25V |
| Power - Max | 1.8W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-261-4, TO-261AA |
| Корпус | PG-SOT223-4 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
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National Semiconductor |
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ADuM2400ARWZ |
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Silicon Laboratories Inc |
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