|
Diode Type | Standard |
Current - Reverse Leakage @ Vr | 5µA @ 400V |
Current - Average Rectified (Io) | 2A |
Voltage - DC Reverse (Vr) (Max) | 400V |
Voltage - Forward (Vf) (Max) @ If | 1.3V @ 2A |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Скорость | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 65ns |
Тип монтажа | Поверхностный |
Корпус (размер) | DO-214AA, SMB |
Корпус | SMB |
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
---|---|---|---|---|---|---|---|---|
BZX384-C5V1 | PHILIPS | |||||||
BZX384-C5V1 | NXP | |||||||
BZX384-C5V1 | 5.80 | |||||||
BZX384-C5V1 | PHILIPS | 1 103 | ||||||
LD1117S33C | ST MICROELECTRONICS | |||||||
LD1117S33C | ||||||||
LD1117S50CTR | ST MICROELECTRONICS | 568 | 34.44 | |||||
LD1117S50CTR | 70.00 | |||||||
LD1117S50CTR | ST MICROELECTRONICS SEMI | 81 | ||||||
LD1117S50CTR | STMicroelectronics | |||||||
LD1117S50CTR | ST MICROELECTRO | |||||||
LD1117S50CTR | TEXAS INSTRUMENTS | 8 | 16.11 | |||||
MCP6022-E/SN | Microchip Technology | |||||||
MCP6022-E/SN | MICRO CHIP | |||||||
MCP6022-E/SN | ||||||||
STM32F100C8T6B | ST MICROELECTRONICS | 517 | 279.53 | |||||
STM32F100C8T6B | 639 | 194.68 | ||||||
STM32F100C8T6B | STMicroelectronics | |||||||
STM32F100C8T6B | МАЛАЙЗИЯ | |||||||
STM32F100C8T6B | ST MICROELECTRONICS SEMI | |||||||
STM32F100C8T6B | ST MICROELECTRO | |||||||
STM32F100C8T6B | STMICROELECTR |
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