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Diode Type | Standard |
Current - Reverse Leakage @ Vr | 5µA @ 400V |
Current - Average Rectified (Io) | 2A |
Voltage - DC Reverse (Vr) (Max) | 400V |
Voltage - Forward (Vf) (Max) @ If | 1.3V @ 2A |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Скорость | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 65ns |
Тип монтажа | Поверхностный |
Корпус (размер) | DO-214AA, SMB |
Корпус | SMB |
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
---|---|---|---|---|---|---|---|---|
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BZX384-C5V1 | PHILIPS |
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BZX384-C5V1 | NXP |
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||||
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BZX384-C5V1 |
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5.80 | |||||
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BZX384-C5V1 | PHILIPS | 1 103 |
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||||
LD1117S33C | ST MICROELECTRONICS |
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|||||
LD1117S33C |
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||||||
LD1117S50CTR | ST MICROELECTRONICS | 568 | 27.90 | |||||
LD1117S50CTR |
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70.00 | ||||||
LD1117S50CTR | ST MICROELECTRONICS SEMI | 81 |
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|||||
LD1117S50CTR | STMicroelectronics |
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LD1117S50CTR | ST MICROELECTRO |
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LD1117S50CTR | TEXAS INSTRUMENTS | 8 | 15.02 | |||||
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MCP6022-E/SN |
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Microchip Technology |
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MCP6022-E/SN |
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MICRO CHIP |
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MCP6022-E/SN |
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STM32F100C8T6B |
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ST MICROELECTRONICS | 493 | 293.50 | ||
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STM32F100C8T6B |
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1 112 | 176.98 | |||
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STM32F100C8T6B |
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STMicroelectronics |
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||
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STM32F100C8T6B |
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МАЛАЙЗИЯ |
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||
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STM32F100C8T6B |
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ST MICROELECTRONICS SEMI |
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||
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![]() |
STM32F100C8T6B |
![]() |
ST MICROELECTRO |
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||
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STM32F100C8T6B |
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STMICROELECTR |
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Корзина
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