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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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293D226X9016C2TE3 |
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Vishay/Sprague
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293D226X9016C2TE3 |
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VISHAY
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3 800
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17.46
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293D226X9016C2TE3 |
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VISHAY
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293D226X9016C2TE3 |
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293D226X9016C2TE3 |
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VISНAY
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LM1117MPX-ADJ/NOPB |
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SOT223
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NATIONAL SEMICONDUCTOR
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LM1117MPX-ADJ/NOPB |
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SOT223
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NSC
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LM1117MPX-ADJ/NOPB |
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SOT223
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NATIONAL SEMICONDUCTOR
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LM1117MPX-ADJ/NOPB |
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SOT223
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TEXAS INSTRUMENTS
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LM1117MPX-ADJ/NOPB |
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SOT223
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TEXAS INSTRUMEN
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LM1117MPX-ADJ/NOPB |
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SOT223
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TEXAS INSTRUMENTS
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72
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74.94
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LM1117MPX-ADJ/NOPB |
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SOT223
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TEXAS
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LM1117MPX-ADJ/NOPB |
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SOT223
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MAX3222CWN |
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MAXIM
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MAX3222CWN |
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MAX
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MAX3222CWN |
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375.00
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MAX3222CWN |
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MAXIM
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24
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MMBT2222ALT1G |
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Транзистор NPN (Uce=30V, Ic=0.6A, P=225mW, B=100-300@I=150mA, f>250MHz, -55 to +150C)
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ON SEMICONDUCTOR
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MMBT2222ALT1G |
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Транзистор NPN (Uce=30V, Ic=0.6A, P=225mW, B=100-300@I=150mA, f>250MHz, -55 to +150C)
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ONS
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MMBT2222ALT1G |
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Транзистор NPN (Uce=30V, Ic=0.6A, P=225mW, B=100-300@I=150mA, f>250MHz, -55 to +150C)
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ON SEMICONDUCTOR
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4 821
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MMBT2222ALT1G |
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Транзистор NPN (Uce=30V, Ic=0.6A, P=225mW, B=100-300@I=150mA, f>250MHz, -55 to +150C)
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MMBT2222ALT1G |
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Транзистор NPN (Uce=30V, Ic=0.6A, P=225mW, B=100-300@I=150mA, f>250MHz, -55 to +150C)
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ONSEMICONDUCTOR
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MMBT2222ALT1G |
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Транзистор NPN (Uce=30V, Ic=0.6A, P=225mW, B=100-300@I=150mA, f>250MHz, -55 to +150C)
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ON SEMICONDUCTO
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MMBT2222ALT1G |
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Транзистор NPN (Uce=30V, Ic=0.6A, P=225mW, B=100-300@I=150mA, f>250MHz, -55 to +150C)
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ONS-FAIR
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MMBT2222ALT1G |
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Транзистор NPN (Uce=30V, Ic=0.6A, P=225mW, B=100-300@I=150mA, f>250MHz, -55 to +150C)
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ONSEMI
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T491A105K016AT |
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KEMET
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T491A105K016AT |
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KEMET
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T491A105K016AT |
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T491A105K016AT |
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МЕКСИКА
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T491A105K016AT |
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KEM
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