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FET Type | MOSFET N-Channel, Metal Oxide |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
FET Feature | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 7.5 Ohm @ 50mA, 5V |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 150mA |
Input Capacitance (Ciss) @ Vds | 50pF @ 25V |
Power - Max | 400mW |
Тип монтажа | Выводной |
Корпус (размер) | TO-226-3, TO-92-3 (TO-226AA) |
Корпус | TO-92-3 |
2N7008 (MOSFET) N-Channel Enhancement-Mode Vertical DMOS FET
Производитель:
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