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Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
Voltage - Collector Emitter Breakdown (Max) | 300V |
Current - Collector (Ic) (Max) | 100mA |
Transistor Type | NPN |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 30mA, 10V |
Power - Max | 250mW |
Frequency - Transition | 50MHz |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
Корпус | TO-236AB |
PMBTA42DS (Биполярные транзисторы) NPN / NPN high-voltage double transistors
Производитель:
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