Current - Continuous Drain (Id) @ 25° C | 200mA |
Drain to Source Voltage (Vdss) | 60V |
Rds On (Max) @ Id, Vgs | 5 Ohm @ 500mA, 10V |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Корпус (размер) | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Тип монтажа | Выводной |
Power - Max | 400mW |
Input Capacitance (Ciss) @ Vds | 30pF @ 25V |
Vgs(th) (Max) @ Id | 3V @ 1mA |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Корпус | TO-92-3 |
2N7000TA (MOSFET) Advanced Small Signal MOSFET
Производитель:
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