Rds On (Max) @ Id, Vgs | 13.5 mOhm @ 10A, 10V |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | PowerTrench® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 10A |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) @ Vgs | 31nC @ 10V |
Input Capacitance (Ciss) @ Vds | 1340pF @ 15V |
Power - Max | 1W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
Корпус | 8-SOICN |
Product Change Notification | Cu Wirebond Change 12/Oct/2007 Mold Compound Change 12/Dec/2007 |
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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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FDS4435 |
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Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт
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FAIR
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FDS4435 |
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Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт
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FSC
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FDS4435 |
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Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт
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FAIRCHILD
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FDS4435 |
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Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт
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174.00
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FDS4435 |
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Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт
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FAIRCHILD
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FDS4435 |
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Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт
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Fairchild Semiconductor
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FDS4435 |
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Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт
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КИТАЙ
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FDS4435 |
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Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт
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ONS
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KA2S0680 |
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FAIR
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KA2S0680 |
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SAMSUNG
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52
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244.80
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KA2S0680 |
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SEC
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KA2S0680 |
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176.00
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KA2S0680 |
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SAM
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KA2S0680 |
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NO TRADEMARK
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MTS-1 |
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PMEG1020EA |
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NXP
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PMEG1020EA |
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NXP
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PMEG1020EA |
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R-17N1-B5K,L-15KC |
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SONG HUEI ELEC
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R-17N1-B5K,L-15KC |
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КИТАЙ
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