Транзистор MOSFET , P- канальный |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Product Change Notification | Lead Dimension Change 23/Jan/2007 |
Серия | QFET™ |
FET Type | MOSFET P-Channel, Metal Oxide |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 135 mOhm @ 6A, 10V |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 12A |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 27nC @ 10V |
Input Capacitance (Ciss) @ Vds | 900pF @ 25V |
Power - Max | 2.5W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Корпус | D-Pak |
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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FDD6612A | 30v n-channel powertrench mosfet | FAIR | ||||||
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FDD6612A | 30v n-channel powertrench mosfet | Fairchild Semiconductor | ||||||
FDD6612A | 30v n-channel powertrench mosfet | |||||||
FDD6612A | 30v n-channel powertrench mosfet | ONS |
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