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Gate Charge (Qg) @ Vgs | 36nC @ 10V |
Vgs(th) (Max) @ Id | 5V @ 100µA |
Current - Continuous Drain (Id) @ 25° C | 4.9A |
Drain to Source Voltage (Vdss) | 150V |
Rds On (Max) @ Id, Vgs | 56 mOhm @ 5.6A, 10V |
FET Feature | Standard |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) @ Vds | 1411pF @ 25V |
Power - Max | 2.8W |
Тип монтажа | Поверхностный |
Корпус (размер) | DirectFET™ Isometric MZ |
Корпус | DIRECTFET™ MZ |
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