![]() |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
FET Type | MOSFET P-Channel, Metal Oxide |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 500 mOhm @ 660mA, 10V |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 1.1A |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 12nC @ 10V |
Input Capacitance (Ciss) @ Vds | 270pF @ 25V |
Power - Max | 1.3W |
Тип монтажа | Выводной |
Корпус (размер) | 4-DIP (0.300", 7.62mm) |
Корпус | 4-DIP, Hexdip, HVMDIP |
IRFD9014PBF (MOSFET) HEXFET® Power MOSFET
Производитель:
|
|
Корзина
|