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Input Capacitance (Ciss) @ Vds | 1543pF @ 25V |
Gate Charge (Qg) @ Vgs | 16nC @ 4.5V |
Vgs(th) (Max) @ Id | 2.4V @ 25µA |
Current - Continuous Drain (Id) @ 25° C | 11A |
Drain to Source Voltage (Vdss) | 30V |
Rds On (Max) @ Id, Vgs | 10 mOhm @ 11A, 20V |
FET Feature | Logic Level Gate |
FET Type | MOSFET P-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Power - Max | 2.8W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-PowerVQFN |
Корпус | PQFN (3x3) |
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