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Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Серия | HEXFET® |
FET Type | MOSFET P-Channel, Metal Oxide |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 175 mOhm @ 6.6A, 10V |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 11A |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 19nC @ 10V |
Input Capacitance (Ciss) @ Vds | 350pF @ 25V |
Power - Max | 38W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Корпус | D-Pak |
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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2SC4672 |
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Транзистор биполярный 50В, 5А, 210МГц, SC-62 | ROHM | 26 | 413.10 | |
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2SC4672 |
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Транзистор биполярный 50В, 5А, 210МГц, SC-62 |
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76.00 | ||
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2SC4672 |
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Транзистор биполярный 50В, 5А, 210МГц, SC-62 | КИТАЙ |
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2SC4672 |
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Транзистор биполярный 50В, 5А, 210МГц, SC-62 | CJ |
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IRFL024NTRPBF | INTERNATIONAL RECTIFIER |
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IRFL024NTRPBF | INFINEON | 1 | 27.55 | |||||
IRFL024NTRPBF | 780 | 37.15 | ||||||
IRFL024NTRPBF | VBSEMI |
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MJD117T4G | ON SEMICONDUCTOR |
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MJD117T4G | ON Semiconductor |
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MJD117T4G | ONS |
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MJD117T4G |
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MMSZ11T1G | ON SEMICONDUCTOR |
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MMSZ11T1G | ON SEMICONDUCTOR |
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MMSZ11T1G | ONS |
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MMSZ11T1G |
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Корзина
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