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FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Rds On (Max) @ Id, Vgs | 2.8 mOhm @ 24A, 10V |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 24A |
Vgs(th) (Max) @ Id | 2.35V @ 100µA |
Gate Charge (Qg) @ Vgs | 66nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 5720pF @ 15V |
Power - Max | 2.5W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
Корпус | 8-SO |
IRF8788PbF (MOSFET) 30V Single N-Channel HEXFET Power MOSFET
Производитель:
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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560МКФ 200 (22X40) |
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BAT64-04W | INFINEON |
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BAT64-04W |
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IRF9540NPBF |
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P-канальный полевой транзистор 140Вт, 100В, 23А | INTERNATIONAL RECTIFIER |
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IRF9540NPBF |
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P-канальный полевой транзистор 140Вт, 100В, 23А | INTERNATIONAL RECTIFIER |
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IRF9540NPBF |
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P-канальный полевой транзистор 140Вт, 100В, 23А | INFINEON | 1 372 | 88.50 | |
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IRF9540NPBF |
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P-канальный полевой транзистор 140Вт, 100В, 23А | 960 | 42.76 | ||
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IRFP22N60K |
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N-MOS 600V, 22A, 370W | VISHAY |
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IRFP22N60K |
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N-MOS 600V, 22A, 370W |
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LT1963AEQ | LINEAR TECHNOLOGY |
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LT1963AEQ | LT | 511 | 560.00 | ||||
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LT1963AEQ |
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760.00 | |||||
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LT1963AEQ | LINEAR TECHNOLOGY |
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LT1963AEQ | LTC |
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LT1963AEQ | AD-LTC |
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LT1963AEQ | LINEAR |
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Корзина
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