![]() |
|
Сопротивление (Ом) | 100K |
Серия | RC0201 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Мощность (Ватт) | 0.05W, 1/20W |
Composition | Thick Film |
Температурный коэфициент | ±200ppm/°C |
Допустимые отклонения емкости | ±1% |
Size / Dimension | 0.024" L x 0.012" W (0.60mm x 0.30mm) |
Высота | 0.010" (0.26mm) |
Number of Terminations | 2 |
Корпус (размер) | 0201 (0603 Metric) |
Tolerance | ±1% |
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
---|---|---|---|---|---|---|---|---|
CC1206KKX5R9BB106 | YAGEO | 203 408 | 3.02 | |||||
CC1206KKX5R9BB106 |
![]() |
![]() |
||||||
![]() |
![]() |
FDN357N |
![]() |
N-channel logic level enhancement mode field effect transistor | FAIR |
![]() |
![]() |
|
![]() |
![]() |
FDN357N |
![]() |
N-channel logic level enhancement mode field effect transistor | FAIRCHILD |
![]() |
![]() |
|
![]() |
![]() |
FDN357N |
![]() |
N-channel logic level enhancement mode field effect transistor | FAIRCHILD | 930 |
![]() |
|
![]() |
![]() |
FDN357N |
![]() |
N-channel logic level enhancement mode field effect transistor | Fairchild Semiconductor |
![]() |
![]() |
|
![]() |
![]() |
FDN357N |
![]() |
N-channel logic level enhancement mode field effect transistor | 7 200 | 8.44 | ||
![]() |
![]() |
FDN357N |
![]() |
N-channel logic level enhancement mode field effect transistor | ONS |
![]() |
![]() |
|
GRM033R61A225KE47D | MURATA |
![]() |
![]() |
|||||
GRM033R61A225KE47D | MUR | 38 323 | 1.12 | |||||
GRM1555C1H2R2CA01D | MURATA | 35 840 | 8.42 | |||||
GRM1555C1H2R2CA01D | MURATA |
![]() |
![]() |
|||||
GRM1555C1H2R2CA01D | MUR | 166 370 |
0.60 >1000 шт. 0.12 |
|||||
GRM1555C1H2R2CA01D | 65 |
0.90 >500 шт. 0.30 |
||||||
RC0402FR-073K6L | YAGEO | 240 467 |
0.50 >1000 шт. 0.10 |
|||||
RC0402FR-073K6L | YAGEO | 6 666 |
![]() |
|||||
RC0402FR-073K6L |
![]() |
![]() |
|
Корзина
|