FET Type | MOSFET N-Channel, Metal Oxide |
Серия | CoolMOS™ |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 13.1A, 10V |
Drain to Source Voltage (Vdss) | 560V |
Current - Continuous Drain (Id) @ 25° C | 21A |
Vgs(th) (Max) @ Id | 3.9V @ 1mA |
Gate Charge (Qg) @ Vgs | 95nC @ 10V |
Input Capacitance (Ciss) @ Vds | 2400pF @ 25V |
Power - Max | 208W |
Тип монтажа | Выводной |
Корпус (размер) | TO-220-3 |
Корпус | PG-TO220-3 |
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
---|---|---|---|---|---|---|---|---|
560МКФ 200 (22X40) | ||||||||
FDP18N50 | 500v n-channel mosfet | FSC | ||||||
FDP18N50 | 500v n-channel mosfet | FAIR | ||||||
FDP18N50 | 500v n-channel mosfet | Fairchild Semiconductor | ||||||
FDP18N50 | 500v n-channel mosfet | FAIRCHILD | ||||||
FDP18N50 | 500v n-channel mosfet | FSC1 | ||||||
FDP18N50 | 500v n-channel mosfet | |||||||
FDP18N50 | 500v n-channel mosfet | ONS | ||||||
FDP18N50 | 500v n-channel mosfet | ON SEMICONDUCTOR | ||||||
MC33368DR2G | ON SEMICONDUCTOR | |||||||
MC33368DR2G | ONS | |||||||
MC33368DR2G | 404.80 | |||||||
SG6848T | SGC | |||||||
SG6848T | ||||||||
SG6848T | ТАЙВАНЬ (КИТАЙ) | |||||||
SG6848T | ТАЙВАНЬ(КИТАЙ) | |||||||
STTH12R06DIRG | ST MICROELECTRONICS | 224 | 225.82 | |||||
STTH12R06DIRG | STMicroelectronics | |||||||
STTH12R06DIRG | ||||||||
STTH12R06DIRG | ST MICROELECTRO |
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