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Power - Max | 190W |
Input Capacitance (Ciss) @ Vds | 3550pF @ 50V |
Gate Charge (Qg) @ Vgs | 140nC @ 10V |
Vgs(th) (Max) @ Id | 4V @ 100µA |
Current - Continuous Drain (Id) @ 25° C | 73A |
Drain to Source Voltage (Vdss) | 100V |
Rds On (Max) @ Id, Vgs | 14 mOhm @ 44A, 10V |
FET Feature | Standard |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
Корпус | D2PAK |
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Корзина
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