![]() |
|
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Серия | HEXFET® |
FET Type | MOSFET P-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 7 mOhm @ 16A, 4.5V |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25° C | 16A |
Vgs(th) (Max) @ Id | 600mV @ 500µA |
Gate Charge (Qg) @ Vgs | 212nC @ 5V |
Input Capacitance (Ciss) @ Vds | 17179pF @ 10V |
Power - Max | 2.5W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
Корпус | 8-SO |
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
---|---|---|---|---|---|---|---|---|
IRFHM9331TRPBF | INTERNATIONAL RECTIFIER |
![]() |
![]() |
|||||
IRFHM9331TRPBF | INTERNATIONAL RECTIFIER | 62 |
![]() |
|||||
IRFHM9331TRPBF |
![]() |
![]() |
||||||
IRFHM9331TRPBF | INFINEON | 1 340 | 52.13 | |||||
![]() |
![]() |
MAX3221EAE | MAXIM |
![]() |
![]() |
|||
![]() |
![]() |
MAX3221EAE | 157 | 136.08 | ||||
![]() |
![]() |
MAX3221EAE | MAX |
![]() |
![]() |
|||
SN65HVD232DR | TEXAS INSTRUMENTS |
![]() |
![]() |
|||||
SN65HVD232DR | TEXAS INSTRUMENTS | 646 |
![]() |
|||||
SN65HVD232DR | TEXAS | 4 699 | 67.23 | |||||
SN65HVD232DR | 1 246 | 76.57 | ||||||
SN65HVD232DR | ТI |
![]() |
![]() |
|||||
SN74LVC1G06DCKR | TEXAS INSTRUMENTS |
![]() |
![]() |
|||||
SN74LVC1G06DCKR | TEXAS INSTRUMENTS | 2 490 |
![]() |
|||||
SN74LVC1G06DCKR | TEXAS | 5 570 | 7.62 | |||||
SN74LVC1G06DCKR |
![]() |
![]() |
||||||
![]() |
SN74LVC1G08DCKR |
![]() |
18.60 | |||||
![]() |
SN74LVC1G08DCKR | TEXAS INSTRUMENTS | 1 360 | 12.40 | ||||
![]() |
SN74LVC1G08DCKR | TEXAS INSTRUMENTS | 12 148 |
![]() |
||||
![]() |
SN74LVC1G08DCKR | TEXAS | 9 925 | 7.26 | ||||
![]() |
SN74LVC1G08DCKR | YOUTAI | 36 712 | 2.80 | ||||
![]() |
SN74LVC1G08DCKR | UMW | 4 800 | 4.13 | ||||
![]() |
SN74LVC1G08DCKR | UMW-YOUTAI |
![]() |
![]() |
|
Корзина
|