BZV55-C4V3
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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Voltage - Zener (Nom) (Vz) | 4.3V |
| Voltage - Forward (Vf) (Max) @ If | 900mV @ 10mA |
| Current - Reverse Leakage @ Vr | 3µA @ 1V |
| Допустимые отклонения емкости | ±5% |
| Power - Max | 500mW |
| Impedance (Max) (Zzt) | 90 Ohm |
| Тип монтажа | Поверхностный |
| Корпус (размер) | SOD-80C |
| Корпус | LLDS; MiniMelf |
| Рабочая температура | -65°C ~ 200°C |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
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BZV55 (Стабилитроны) Zener Diodes Также в этом файле: BZV55-C4V3, BZV55-C4V3
Производитель:
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С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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1N4007 |
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DC COMPONENTS | 96 861 | 2.06 | ||
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1N4007 |
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GENERAL SEMICONDUCTOR |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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PANJIT |
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1N4007 |
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FSC |
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1N4007 |
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MCC |
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1N4007 |
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DIC |
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1N4007 |
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FAIR |
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1N4007 |
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PHILIPS |
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1N4007 |
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MIC | 323 108 | 1.40 | ||
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1N4007 |
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DIOTEC | 77 782 | 3.30 | ||
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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LD |
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1N4007 |
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JGD |
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1N4007 |
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MING SHUN |
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1N4007 |
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MS |
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1N4007 |
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QUAN-HONG |
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1N4007 |
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XR |
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1N4007 |
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GALAXY |
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1N4007 |
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COMPACT TECHNOLOGY |
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1N4007 |
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DC COMPONENTS |
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1N4007 |
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FAIRCHILD | 288 |
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1N4007 |
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GENERAL SEMICONDUCTOR | 1 |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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MASTER INSTRUMENT CORPORATION |
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1N4007 |
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MICRO SEMICONDUCTOR(MICROSEMI) |
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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PANJIT | 307 692 |
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1N4007 |
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PHILIPS |
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1N4007 |
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TAIWAN SEMICONDUCTOR MANF. |
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1N4007 |
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YANGJIE SEMICONDUCT |
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1N4007 |
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Fairchild Semiconductor |
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1N4007 |
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD |
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1N4007 |
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MICROSEMI CORP |
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1N4007 |
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ТАЙВАНЬ(КИТАЙ) |
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1N4007 |
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GD |
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1N4007 |
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JC |
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1N4007 |
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KINGTRONICS |
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1N4007 |
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YJ | 356 700 | 1.58 | ||
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1N4007 |
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DIODES INC. |
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1N4007 |
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MIG |
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1N4007 |
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MICRO COMMERCIAL COMPONENTS |
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1N4007 |
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MOTOROLA |
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1N4007 |
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YJ ELE-NIC CORP |
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1N4007 |
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RECTIFIER |
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1N4007 |
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EXTRA COM-NTS |
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1N4007 |
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GALAXY ELECTRICAL |
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1N4007 |
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GEMBIRD |
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1N4007 |
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ТОМИЛИНО |
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1N4007 |
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EXTRA |
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1N4007 |
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КИТАЙ | 800 | 6.12 | ||
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1N4007 |
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DIOTEC SEMICONDUCTOR |
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1N4007 |
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MD |
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1N4007 |
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232 914 |
1.92 >100 шт. 0.96 |
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1N4007 |
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ONS-FAIR |
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1N4007 |
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ONS |
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1N4007 |
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ELZET |
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1N4007 |
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GALAXY ME |
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1N4007 |
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LGE | 101 | 1.98 | ||
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1N4007 |
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HOTTECH | 90 031 | 1.42 | ||
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1N4007 |
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KLS | 41 600 | 2.95 | ||
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1N4007 |
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YS |
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1N4007 |
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YANGJIE | 22 400 | 1.81 | ||
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1N4007 |
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YANGJIE (YJ) |
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1N4007 |
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MC |
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1N4007 |
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FAIRCHILD |
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1N4007 |
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WUXI XUYANG |
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1N4007 |
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KUU |
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1N4007 |
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CHINA | 15 317 | 1.02 | ||
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1N4007 |
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SUNRISETRON |
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1N4007 |
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UNKNOWN |
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1N4007 |
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BILIN |
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1N4007 |
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KEHE |
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1N4007 |
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1 |
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1N4007 |
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BL |
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1N4007 |
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SUNTAN | 81 094 | 2.30 | ||
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1N4007 |
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TWGMC | 84 551 |
1.12 >100 шт. 0.56 |
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1N4007 |
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CTK |
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1N4007 |
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JUXING | 125 | 2.44 | ||
| 1N4944 400V | 10 873 | 1.40 | ||||||
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MBR20100CTG |
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2 диода Шоттки (общий катод, U=100V, I=20A (2х10А), Vf=0.75V@10A, -65 to +150C) | ON SEMICONDUCTOR | 1 | 85.44 | |
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MBR20100CTG |
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2 диода Шоттки (общий катод, U=100V, I=20A (2х10А), Vf=0.75V@10A, -65 to +150C) | ONS |
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MBR20100CTG |
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2 диода Шоттки (общий катод, U=100V, I=20A (2х10А), Vf=0.75V@10A, -65 to +150C) | ONSEMICONDUCTOR |
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MBR20100CTG |
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2 диода Шоттки (общий катод, U=100V, I=20A (2х10А), Vf=0.75V@10A, -65 to +150C) | ON SEMICONDUCTO |
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MBR20100CTG |
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2 диода Шоттки (общий катод, U=100V, I=20A (2х10А), Vf=0.75V@10A, -65 to +150C) |
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MBR20100CTG |
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2 диода Шоттки (общий катод, U=100V, I=20A (2х10А), Vf=0.75V@10A, -65 to +150C) | KOME |
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TOP226Y |
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SMPS сх. упpавления, MOSFET 700V, Pout=125W max | PWR |
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TOP226Y |
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SMPS сх. упpавления, MOSFET 700V, Pout=125W max |
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343.96 | |||
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TOP226Y |
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SMPS сх. упpавления, MOSFET 700V, Pout=125W max | Power Integrations |
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| ZCAT1325-0530A-BK (BLACK) | 20 480 | 45.77 | ||||||
| ZCAT1325-0530A-BK (BLACK) | RUICHI |
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