| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100µA, 5V |
| Power - Max | 350mW |
| Frequency - Transition | 40MHz |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23 |
| Product Change Notification | Mold Compound Change 12/Dec/2007 |
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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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DSPB56374AE |
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FREESCALE SEMICONDUCTOR
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DSPB56374AE |
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FREESCALE SEMICONDUCTOR
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DSPB56374AE |
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MMBT5401LT1G |
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Полевой транзистор SMD, PNP, 150В, 500мA, SOT-23
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ON SEMICONDUCTOR
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4
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1.83
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MMBT5401LT1G |
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Полевой транзистор SMD, PNP, 150В, 500мA, SOT-23
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ONS
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7 320
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4.79
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MMBT5401LT1G |
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Полевой транзистор SMD, PNP, 150В, 500мA, SOT-23
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ON SEMICONDUCTOR
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794
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MMBT5401LT1G |
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Полевой транзистор SMD, PNP, 150В, 500мA, SOT-23
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MMBT5401LT1G |
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Полевой транзистор SMD, PNP, 150В, 500мA, SOT-23
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ON SEMICONDUCTO
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MMBT5401LT1G |
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Полевой транзистор SMD, PNP, 150В, 500мA, SOT-23
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ONSEMICONDUCTOR
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MMBT5401LT1G |
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Полевой транзистор SMD, PNP, 150В, 500мA, SOT-23
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0.00
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MMBT5551LT1G |
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ON SEMICONDUCTOR
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140
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1.68
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MMBT5551LT1G |
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ONS
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19 975
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4.72
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MMBT5551LT1G |
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ON SEMICONDUCTOR
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5 108
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MMBT5551LT1G |
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320
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1.10
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MMBT5551LT1G |
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ON SEMICONDUCTO
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MMBT5551LT1G |
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ONSEMICONDUCTOR
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MMBT5551LT1G |
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SEMTECH
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SAE800 |
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Генератор одно-/двух-/трех-тонального сигнала (Vs=2.8-18V)
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INFINEON
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SAE800 |
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Генератор одно-/двух-/трех-тонального сигнала (Vs=2.8-18V)
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529.24
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SAE800 |
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Генератор одно-/двух-/трех-тонального сигнала (Vs=2.8-18V)
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Infineon Technologies
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SAE800 |
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Генератор одно-/двух-/трех-тонального сигнала (Vs=2.8-18V)
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АВСТРИЯ
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TPS73001DBVT |
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TEXAS INSTRUMENTS
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TPS73001DBVT |
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TEXAS
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136
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42.25
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TPS73001DBVT |
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63.72
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TPS73001DBVT |
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TEXAS INSTRUMENTS
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TPS73001DBVT |
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ТАИЛАНД
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TPS73001DBVT |
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TEXAS INSTRUMEN
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Версия для печати
