Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Voltage - Forward (Vf) (Max) @ If | 1V @ 100mA |
Current - Reverse Leakage @ Vr | 100nA @ 50V |
Current - Average Rectified (Io) (per Diode) | 200mA (DC) |
Voltage - DC Reverse (Vr) (Max) | 50V |
Reverse Recovery Time (trr) | 4ns |
Diode Type | Standard |
Скорость | Small Signal =< 200mA (Io), Any Speed |
Diode Configuration | 1 Pair Common Cathode |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
Корпус | SOT-23-3 |
Product Change Notification | Wire Change 08/May/2007 Possible Adhesion Issue 11/July/2008 |
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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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1N4001 T/B |
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Выпрямительный диод 50В, 1А
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DC COMPONENTS
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30 076
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1.43
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1N4001 T/B |
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Выпрямительный диод 50В, 1А
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74LS02N |
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Микросхема стандартной логики ТТЛ(74), И-НЕ 4 х 2
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FAIR
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74LS02N |
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Микросхема стандартной логики ТТЛ(74), И-НЕ 4 х 2
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39.40
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74LS02N |
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Микросхема стандартной логики ТТЛ(74), И-НЕ 4 х 2
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МАЛАЙЗИЯ
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74LS02N |
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Микросхема стандартной логики ТТЛ(74), И-НЕ 4 х 2
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4-7 НЕДЕЛЬ
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188
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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FAIR
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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PHILIPS
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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DC COMPONENTS
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13 269
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2.06
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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NXP
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8
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2.10
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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CHIN
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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CHINA
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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DIOTEC
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2 416
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1.96
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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INFINEON
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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FAIRCHILD
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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GALAXY
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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FAIRCHILD
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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NXP
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3 046
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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PHILIPS
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2 130
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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PHILIPS SEMIC
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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КИТАЙ
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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INFINEON TECH
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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DIODES INC
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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KINGTRON
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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110 397
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1.36
>100 шт. 0.68
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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GALAXY ME
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646
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1.13
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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HOTTECH
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217 954
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1.52
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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LRC
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1 920
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2.07
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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KLS
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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KOME
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10
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1.69
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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SUNTAN
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236 315
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1.62
>100 шт. 0.81
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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SEMTECH
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36 637
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1.59
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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YJ
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35 828
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1.03
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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RUME
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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TRR ELECTRONICS
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286
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1.30
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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NEXPERIA
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39 596
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1.51
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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YANGZHOU YANGJIE ELECTRONIC TECHNOLOGY CO
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16
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1.08
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IRLML2502TR |
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N-канальный полевой транзистор (Vds=20V, Id=4.2A@T=25C, Id=3.4A@T=70C)
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INTERNATIONAL RECTIFIER
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IRLML2502TR |
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N-канальный полевой транзистор (Vds=20V, Id=4.2A@T=25C, Id=3.4A@T=70C)
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7
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39.06
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IRLML2502TR |
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N-канальный полевой транзистор (Vds=20V, Id=4.2A@T=25C, Id=3.4A@T=70C)
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INTERNATIONAL RECTIFIER
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IRLML2502TR |
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N-канальный полевой транзистор (Vds=20V, Id=4.2A@T=25C, Id=3.4A@T=70C)
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INFINEON
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IRLML2502TR |
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N-канальный полевой транзистор (Vds=20V, Id=4.2A@T=25C, Id=3.4A@T=70C)
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HOTTECH
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IRLML2502TR |
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N-канальный полевой транзистор (Vds=20V, Id=4.2A@T=25C, Id=3.4A@T=70C)
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VBSEMI
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IRLML2502TR |
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N-канальный полевой транзистор (Vds=20V, Id=4.2A@T=25C, Id=3.4A@T=70C)
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OLITECH
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1
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8.17
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IRLML2502TR |
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N-канальный полевой транзистор (Vds=20V, Id=4.2A@T=25C, Id=3.4A@T=70C)
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1
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IRLML2502TR |
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N-канальный полевой транзистор (Vds=20V, Id=4.2A@T=25C, Id=3.4A@T=70C)
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JSMICRO
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8 511
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3.24
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SS26 |
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GENERAL SEMICONDUCTOR
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SS26 |
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FAIR
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SS26 |
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FSC
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SS26 |
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DC COMPONENTS
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SS26 |
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15 160
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1.73
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SS26 |
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MCC
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SS26 |
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FAIRCHILD
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SS26 |
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FAIRCHILD
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33
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SS26 |
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GENERAL SEMICONDUCTOR
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SS26 |
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Fairchild Semiconductor
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614
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9.39
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SS26 |
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GALAXY
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SS26 |
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YJ
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212 236
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3.01
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SS26 |
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ONS-FAIR
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SS26 |
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ONS
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SS26 |
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GALAXY ME
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SS26 |
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HOTTECH
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6 684
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4.07
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SS26 |
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YANGJIE
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SS26 |
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YANGJIE (YJ)
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SS26 |
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MDD
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40 516
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1.73
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SS26 |
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1
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SS26 |
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JSCJ
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30 380
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3.30
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SS26 |
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SEMTECH
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17 480
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9.59
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SS26 |
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MIC
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2 530
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2.73
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SS26 |
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JINGDAO
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72 846
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2.02
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