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Current - Continuous Drain (Id) @ 25° C | 5.7A |
Drain to Source Voltage (Vdss) | 100V |
Rds On (Max) @ Id, Vgs | 35 mOhm @ 5.7A, 10V |
FET Feature | Standard |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Vgs(th) (Max) @ Id | 4.9V @ 50µA |
Gate Charge (Qg) @ Vgs | 20nC @ 10V |
Input Capacitance (Ciss) @ Vds | 890pF @ 25V |
Power - Max | 3W |
Тип монтажа | Поверхностный |
Корпус (размер) | DirectFET™ Isometric SJ |
Корпус | DIRECTFET™ SJ |
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