Тип: Полевые транзисторы общего применения; |
Current - Continuous Drain (Id) @ 25° C | 4.2A |
Drain to Source Voltage (Vdss) | 20V |
Rds On (Max) @ Id, Vgs | 45 mOhm @ 4.2A, 4.5V |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Vgs(th) (Max) @ Id | 1.2V @ 250µA |
Gate Charge (Qg) @ Vgs | 12nC @ 5V |
Input Capacitance (Ciss) @ Vds | 740pF @ 15V |
Power - Max | 1.25W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
Корпус | Micro3™/SOT-23 |
|