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Current - Continuous Drain (Id) @ 25° C | 350mA |
Drain to Source Voltage (Vdss) | 240V |
Rds On (Max) @ Id, Vgs | 6 Ohm @ 350mA, 10V |
FET Feature | Depletion Mode |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | SIPMOS® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Vgs(th) (Max) @ Id | 1V @ 108µA |
Gate Charge (Qg) @ Vgs | 5.7nC @ 5V |
Input Capacitance (Ciss) @ Vds | 108pF @ 25V |
Power - Max | 1.8W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-261-4, TO-261AA |
Корпус | PG-SOT223-4 |
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