IRFR540Z
Hexfet power mosfets discrete n-channel
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Версия для печати
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 28.5 mOhm @ 21A, 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 35A |
| Vgs(th) (Max) @ Id | 4V @ 50µA |
| Gate Charge (Qg) @ Vgs | 59nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1690pF @ 25V |
| Power - Max | 91W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | D-Pak |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
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IRFR540Z (MOSFET) HEXFET Power MOSFETs Discrete N-Channel
Производитель:
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С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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IRFB4615PBF |
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150v single n-channel hexfet power mosfet in a to-220ab package |
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562.40 | ||||||
| IRFI4227 | СИНГАПУР |
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| IRFI4227 | INFINEON |
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STP40NF10 |
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STP40NF10 |
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Транзистор N-MOS 100В 50A TO220 | STMicroelectronics |
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UCC27322D | TEXAS INSTRUMENTS | 9 | 314.87 | ||||
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218.76 | |||||
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