BAS21HT1G
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Версия для печати
| Current - Average Rectified (Io) | 200mA (DC) |
| Voltage - DC Reverse (Vr) (Max) | 250V |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 200mA |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Current - Reverse Leakage @ Vr | 100nA @ 200V |
| Diode Type | Standard |
| Скорость | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 50ns |
| Capacitance @ Vr, F | 5pF @ 0V, 1MHz |
| Тип монтажа | Поверхностный |
| Корпус (размер) | SC-76, SOD-323 |
| Корпус | SOD-323 |
| Product Change Notification | Wire Change 08/Jun/2009 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
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| BAS16XV2T1G | ON SEMICONDUCTOR | 337 | 16.97 | |||||
| BAS16XV2T1G | ON SEMICONDUCTOR | 540 |
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| BAS16XV2T1G | ONS |
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| BAS16XV2T1G | ONSEMICONDUCTOR |
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| BSS138LT1G | ONS | 3 600 | 16.73 | |||||
| BSS138LT1G | ON SEMICONDUCTOR | 77 | 5.78 | |||||
| BSS138LT1G | ON SEMICONDUCTOR | 553 |
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| BSS138LT1G | 23 600 | 3.77 | ||||||
| BSS138LT1G | ON SEMICONDUCTO |
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| BSS138LT1G | LRC |
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| BSS138LT1G | VBSEMI |
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| BSS138LT1G | JSMICRO | 24 140 |
1.96 >100 шт. 0.98 |
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| IRFL110TRPBF | VISHAY | 5 440 | 42.31 | |||||
| IRFL110TRPBF | SILICONIX |
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| IRFL110TRPBF | SILICONIX | 245 |
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| IRFL110TRPBF | Vishay/Siliconix |
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| IRFL110TRPBF | VISHAY/IR |
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| IRFL110TRPBF | INTERNATIONAL RECTIFIER | 32 |
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| IRFL110TRPBF | INTERNATIONAL RECTIFIER |
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| IRFL110TRPBF |
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| IRFL110TRPBF | INFINEON |
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| PBD-32 | 113 | 82.72 | ||||||
| PBD-32 | NXU |
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| PBD-32 | KLS | 1 752 | 32.47 | |||||
| PBD-32 | BM |
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| PLLD1.27-10A | KLS |
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| PLLD1.27-10A |
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