BSP318S
N-канальный полевой транзистор (Vds=60V, Id=2.6A@T=25C, Rds=0,9 Ohm (typ), P=1,8W, -55 to 150C)
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Версия для печати
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Серия | SIPMOS® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 90 mOhm @ 2.6A, 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 2.6A |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Gate Charge (Qg) @ Vgs | 20nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 380pF @ 25V |
| Power - Max | 1.8W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-261-4, TO-261AA |
| Корпус | PG-SOT223-4 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
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