IRGP50B60PD
SMPS IGBT (Vce=600V, Ic=75A@25C, Ic=45A@100C, Pc=370W@25C,TO-247AC,-55 to +150C)
|
|
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| IGBT Type | NPT |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Vce(on) (Max) @ Vge, Ic | 2.85V @ 15V, 50A |
| Current - Collector (Ic) (Max) | 75A |
| Power - Max | 390W |
| Тип входа | Standard |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-247AD |
| Корпус | TO-247AD |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
 |
BC807 |
|
Транзистор PNP 45В, 500mA, 80MHz | NXP |
|
|
||
|
|
BC807 |
|
Транзистор PNP 45В, 500mA, 80MHz | PHILIPS |
|
|
||
|
|
BC807 |
|
Транзистор PNP 45В, 500mA, 80MHz |
|
|
|||
|
|
BC807 |
|
Транзистор PNP 45В, 500mA, 80MHz | NXP | 7 915 |
|
||
|
|
BC807 |
|
Транзистор PNP 45В, 500mA, 80MHz | PHILIPS | 31 262 |
|
||
|
|
BC807 |
|
Транзистор PNP 45В, 500mA, 80MHz | MULTICOMP | 649 | 7.53 | ||
|
|
BC807 |
|
Транзистор PNP 45В, 500mA, 80MHz | JSCJ | 412 241 | 1.45 | ||
| BYS10-45-E3/TR3 | VISHAY |
|
|
|||||
| BYS10-45-E3/TR3 | Vishay/General Semiconductor |
|
|
|||||
| BYS10-45-E3/TR3 | VISHAY | 32 |
|
|||||
| BYS10-45-E3/TR3 |
|
|
||||||
|
|
BZX84-C18 | GENERAL SEMICONDUCTOR |
|
|
||||
|
|
BZX84-C18 | PHILIPS |
|
|
||||
|
|
BZX84-C18 | NXP |
|
|
||||
|
|
BZX84-C18 | GENERAL SEMICONDUCTOR |
|
|
||||
|
|
BZX84-C18 | NXP | 516 |
|
||||
|
|
BZX84-C18 | PHILIPS | 256 |
|
||||
|
|
BZX84-C18 | PHILIPS SEMIC |
|
|
||||
|
|
BZX84-C18 |
|
|
|||||
 |
|
G30N60A4 |
|
Транзистор IGBT TO-247AC, 600V, 75A, 463W, 8.0 г. | FAIR |
|
|
|
|
|
|
G30N60A4 |
|
Транзистор IGBT TO-247AC, 600V, 75A, 463W, 8.0 г. |
|
835.20 | ||
|
|
US1G | DC COMPONENTS | 42 000 | 3.19 | ||||
|
|
US1G | DIC |
|
|
||||
|
|
US1G | SMK |
|
|
||||
|
|
US1G | LITE ON OPTOELECTRONICS |
|
|
||||
|
|
US1G | PACELEADER INDUSTRIAL |
|
|
||||
|
|
US1G | 69 | 8.80 | |||||
|
|
US1G | DIOTEC |
|
|
||||
|
|
US1G | GENERAL SEMICONDUCTOR |
|
|
||||
|
|
US1G | GALAXY |
|
|
||||
|
|
US1G | GENERAL SEMICONDUCTOR | 24 |
|
||||
|
|
US1G | LITE ON OPTOELECTRONICS |
|
|
||||
|
|
US1G | PACELEADER INDUSTRIAL CORP. |
|
|
||||
|
|
US1G | КИТАЙ |
|
|
||||
|
|
US1G | MICRO ELECTRONICS | 2 109 |
|
||||
|
|
US1G | MIC | 15 123 | 1.09 | ||||
|
|
US1G | YJ | 126 383 | 1.97 | ||||
|
|
US1G | LITE-ON SEMICONDUCTOR CORP | 2 758 |
|
||||
|
|
US1G | GALAXY ME |
|
|
||||
|
|
US1G | HOTTECH | 264 | 1.97 | ||||
|
|
US1G | WUXI XUYANG | 27 240 | 6.16 | ||||
|
|
US1G | YANGJIE (YJ) |
|
|
||||
|
|
US1G | SEMTECH |
|
|
