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Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Серия | HEXFET® |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 26 mOhm @ 4.1A, 10V |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 6.9A |
Vgs(th) (Max) @ Id | 5.5V @ 250µA |
Gate Charge (Qg) @ Vgs | 61nC @ 10V |
Input Capacitance (Ciss) @ Vds | 3180pF @ 25V |
Power - Max | 2.5W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
Корпус | 8-SO |
IRF7473 (Дискретные сигналы) Power Mosfet
Производитель:
|
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
---|---|---|---|---|---|---|---|---|
2П103Д | 490 | 178.50 | ||||||
2П103Д | ВИННИЦА | |||||||
2П103Д | RUS | |||||||
2Т504А | 1 | 264.00 | ||||||
2Т504А | КРЕМНИЙ | 208 | 546.00 | |||||
2Т504А | БРЯНСК | |||||||
2Т505А | 28 | 1 285.20 | ||||||
2Т505А | БРЯНСК | |||||||
2Т505А | КРЕМНИЙ | |||||||
2Т505А | МИНСК | |||||||
US1G | DC COMPONENTS | 42 000 | 3.12 | |||||
US1G | DIC | |||||||
US1G | SMK | |||||||
US1G | LITE ON OPTOELECTRONICS | |||||||
US1G | PACELEADER INDUSTRIAL | |||||||
US1G | 69 | 8.80 | ||||||
US1G | DIOTEC | |||||||
US1G | GENERAL SEMICONDUCTOR | |||||||
US1G | GALAXY | |||||||
US1G | GENERAL SEMICONDUCTOR | 24 | ||||||
US1G | LITE ON OPTOELECTRONICS | |||||||
US1G | PACELEADER INDUSTRIAL CORP. | |||||||
US1G | КИТАЙ | |||||||
US1G | MICRO ELECTRONICS | 2 109 | ||||||
US1G | MIC | 15 123 | 1.07 | |||||
US1G | YJ | 126 383 | 1.97 | |||||
US1G | LITE-ON SEMICONDUCTOR CORP | 2 758 | ||||||
US1G | GALAXY ME | |||||||
US1G | HOTTECH | 264 | 1.97 | |||||
US1G | WUXI XUYANG | 24 943 | 6.02 | |||||
US1G | YANGJIE (YJ) | |||||||
US1G | SEMTECH | |||||||
XC2S100-5TQG144I | 2700LogC 100KSysGa 92I/O TQFP144 | XILINX | ||||||
XC2S100-5TQG144I | 2700LogC 100KSysGa 92I/O TQFP144 | 2 443.20 | ||||||
XC2S100-5TQG144I | 2700LogC 100KSysGa 92I/O TQFP144 | XILINX |
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