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Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Серия | HEXFET® |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 26 mOhm @ 4.1A, 10V |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 6.9A |
Vgs(th) (Max) @ Id | 5.5V @ 250µA |
Gate Charge (Qg) @ Vgs | 61nC @ 10V |
Input Capacitance (Ciss) @ Vds | 3180pF @ 25V |
Power - Max | 2.5W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
Корпус | 8-SO |
IRF7473 (Дискретные сигналы) Power Mosfet
Производитель:
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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2П103Д | 404 | 168.30 | ||||||
2П103Д | ВИННИЦА |
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2П103Д | RUS |
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2Т504А | 1 | 264.00 | |||||
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2Т504А | КРЕМНИЙ | 232 | 546.00 | ||||
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2Т504А | БРЯНСК |
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2Т505А | 53 | 1 285.20 | |||||
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2Т505А | БРЯНСК |
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2Т505А | КРЕМНИЙ | 4 | 509.60 | ||||
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2Т505А | МИНСК |
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US1G | DC COMPONENTS | 30 000 | 3.12 | ||||
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US1G | DIC |
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US1G | SMK |
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US1G | LITE ON OPTOELECTRONICS |
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US1G | PACELEADER INDUSTRIAL |
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US1G | 8 069 |
1.58 >100 шт. 0.79 |
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US1G | DIOTEC |
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US1G | GENERAL SEMICONDUCTOR |
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US1G | GALAXY |
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US1G | GENERAL SEMICONDUCTOR | 24 |
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US1G | LITE ON OPTOELECTRONICS |
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US1G | PACELEADER INDUSTRIAL CORP. |
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US1G | КИТАЙ |
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US1G | MICRO ELECTRONICS | 2 109 |
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US1G | MIC | 12 184 | 2.00 | ||||
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US1G | YJ | 176 147 | 1.85 | ||||
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US1G | LITE-ON SEMICONDUCTOR CORP | 2 758 |
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US1G | GALAXY ME |
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US1G | HOTTECH | 2 400 | 1.97 | ||||
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US1G | WUXI XUYANG | 21 333 | 5.32 | ||||
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US1G | YANGJIE (YJ) |
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US1G | SEMTECH |
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XC2S100-5TQG144I |
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2700LogC 100KSysGa 92I/O TQFP144 | XILINX |
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XC2S100-5TQG144I |
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2700LogC 100KSysGa 92I/O TQFP144 |
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2 443.20 | ||||
XC2S100-5TQG144I |
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2700LogC 100KSysGa 92I/O TQFP144 | XILINX |
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Корзина
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